A Fast Look Up Table Based Lithography Simulator with SOCS Model for OPC Algorithm

• Item type: Symposium(1)
• 公開日: 2020-08-31
• タイトル: A Fast Look Up Table Based Lithography Simulator with SOCS Model for OPC Algorithm
• タイトル / 言語: en
• タイトル: A Fast Look Up Table Based Lithography Simulator with SOCS Model for OPC Algorithm
• 言語: eng
• キーワード / 主題Scheme: Other
• キーワード / 主題: 故障検出・リソグラフィ
• 資源タイプ / 資源タイプ識別子: http://purl.org/coar/resource_type/c_5794
• 資源タイプ: conference paper
• 著者所属: Tokyo Institute of Technology
• 著者所属: Tokyo Institute of Technology
• 著者所属: Tokyo Institute of Technology
• 著者所属: The University of Aizu
• 著者所属: KIOXIA Corporation
• 著者所属(英): en
• 著者所属(英): Tokyo Institute of Technology
• 著者所属(英): en
• 著者所属(英): Tokyo Institute of Technology
• 著者所属(英): en
• 著者所属(英): Tokyo Institute of Technology
• 著者所属(英): en
• 著者所属(英): The University of Aizu
• 著者所属(英): en
• 著者所属(英): KIOXIA Corporation
• 著者名: Tahsin, Binte Shameem; Atsushi, Takahashi; Hiroyoshi, Tanabe; Yukihide, Kohira; Chikaaki, Kodama
• 著者名(英): Tahsin, Binte Shameem; Atsushi, Takahashi; Hiroyoshi, Tanabe; Yukihide, Kohira; Chikaaki, Kodama
• 論文抄録 / 内容記述タイプ: Other
• 論文抄録 / 内容記述: With the advancement of technology node, nano lithography is becoming more complex and OPC algorithm is becoming more aggressive. For most OPC (Optical Proximity Correction) algorithm, it is not necessary to know the intensities of all the points in the simulation region. Only checking the intensities of certain points of mask (also known as tap point intensities), the behavior of the algorithm can be decided. In this research, a look up table and sum of coherent system (SOCS) model based lithography simulator has been proposed to give enough information to algorithm faster without generating the aerial image by complex mask pattern. The goal of this research is to build a simulator for intensity modelling that can provide the tap point intensity of mask as fast as possible and to guide OPC algorithm based on tap point intensity evaluation.
• 論文抄録(英) / 内容記述タイプ: Other
• 論文抄録(英) / 内容記述: With the advancement of technology node, nano lithography is becoming more complex and OPC algorithm is becoming more aggressive. For most OPC (Optical Proximity Correction) algorithm, it is not necessary to know the intensities of all the points in the simulation region. Only checking the intensities of certain points of mask (also known as tap point intensities), the behavior of the algorithm can be decided. In this research, a look up table and sum of coherent system (SOCS) model based lithography simulator has been proposed to give enough information to algorithm faster without generating the aerial image by complex mask pattern. The goal of this research is to build a simulator for intensity modelling that can provide the tap point intensity of mask as fast as possible and to guide OPC algorithm based on tap point intensity evaluation.
• 書誌情報: DAシンポジウム2020論文集; 巻 2020, p. 142-149, 発行日 2020-08-31
• 出版者 / 言語: ja
• 出版者: 情報処理学会