{"created":"2025-01-18T23:27:05.443698+00:00","updated":"2025-01-22T01:08:26.341889+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00066205","sets":["934:1160:5887"]},"path":["5887"],"owner":"10","recid":"66205","title":["A GIDL-Current Model for Advanced MOSFET Technologies without Binning"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-02-17"},"_buckets":{"deposit":"72a6a69a-3520-4f4b-b891-8cf2b0f9f2ea"},"_deposit":{"id":"66205","pid":{"type":"depid","value":"66205","revision_id":0},"owners":[10],"status":"published","created_by":10},"item_title":"A GIDL-Current Model for Advanced MOSFET Technologies without Binning","author_link":["0","0"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"A GIDL-Current Model for Advanced MOSFET Technologies without Binning"},{"subitem_title":"A GIDL-Current Model for Advanced MOSFET Technologies without Binning","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Device Modeling","subitem_subject_scheme":"Other"}]},"item_type_id":"3","publish_date":"2009-02-17","item_3_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Waseda University / Semiconductor Technology Academic Research Center"},{"subitem_text_value":"Hiroshima University"},{"subitem_text_value":"Silvaco Japan Co., Ltd."},{"subitem_text_value":"Hiroshima University"},{"subitem_text_value":"Waseda University"}]},"item_3_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Waseda University / Semiconductor Technology Academic Research Center","subitem_text_language":"en"},{"subitem_text_value":"Hiroshima University","subitem_text_language":"en"},{"subitem_text_value":"Silvaco Japan Co., Ltd.","subitem_text_language":"en"},{"subitem_text_value":"Hiroshima University","subitem_text_language":"en"},{"subitem_text_value":"Waseda University","subitem_text_language":"en"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/66205/files/IPSJ-TSLDM0200009.pdf"},"date":[{"dateType":"Available","dateValue":"2009-02-17"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-TSLDM0200009.pdf","filesize":[{"value":"1.0 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"0","billingrole":"5"},{"tax":["include_tax"],"price":"0","billingrole":"6"},{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_date","version_id":"3f4c28dc-d1ef-44a7-8d3d-712b73a272a9","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2009 by the Information Processing Society of Japan"}]},"item_3_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ryosuke, Inagaki"},{"creatorName":"Norio, Sadachika"},{"creatorName":"Dondee, Navarro"},{"creatorName":"MitikoMiura-Mattausch"},{"creatorName":"Yasuaki, Inoue"}],"nameIdentifiers":[{}]}]},"item_3_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ryosuke, Inagaki","creatorNameLang":"en"},{"creatorName":"Norio, Sadachika","creatorNameLang":"en"},{"creatorName":"Dondee, Navarro","creatorNameLang":"en"},{"creatorName":"Mitiko, Miura-Mattausch","creatorNameLang":"en"},{"creatorName":"Yasuaki, Inoue","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_3_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12394951","subitem_source_identifier_type":"NCID"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_6501","resourcetype":"journal article"}]},"item_3_source_id_11":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1882-6687","subitem_source_identifier_type":"ISSN"}]},"item_3_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs is proposed and implemented into HiSIM2, complete surface potential based MOSFET model. The model considers two tunneling mechanisms, the band-to-band tunneling and the trap assisted tunneling. Totally 7 model parameters are introduced. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning of model parameters. The influence of the GIDL current is investigated with circuits, which are sensitive to the change of the stored charge due to the GIDL current.","subitem_description_type":"Other"}]},"item_3_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs is proposed and implemented into HiSIM2, complete surface potential based MOSFET model. The model considers two tunneling mechanisms, the band-to-band tunneling and the trap assisted tunneling. Totally 7 model parameters are introduced. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning of model parameters. The influence of the GIDL current is investigated with circuits, which are sensitive to the change of the stored charge due to the GIDL current.","subitem_description_type":"Other"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"102","bibliographic_titles":[{"bibliographic_title":"IPSJ Transactions on System LSI Design Methodology （TSLDM）"}],"bibliographicPageStart":"93","bibliographicIssueDates":{"bibliographicIssueDate":"2009-02-17","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"2"}]},"relation_version_is_last":true,"weko_creator_id":"10"},"id":66205,"links":{}}