{"updated":"2025-01-19T07:58:15.143133+00:00","links":{},"metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00240468","sets":["1164:2036:11466:11784"]},"path":["11784"],"owner":"44499","recid":"240468","title":["極低温環境に最適なGain Cell DRAM"],"pubdate":{"attribute_name":"公開日","attribute_value":"2024-10-31"},"_buckets":{"deposit":"cc0d95e8-ff6f-479d-851f-ff86aecacb9e"},"_deposit":{"id":"240468","pid":{"type":"depid","value":"240468","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"極低温環境に最適なGain Cell DRAM","author_link":["659717","659718"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"極低温環境に最適なGain Cell DRAM"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ポスター","subitem_subject_scheme":"Other"}]},"item_type_id":"4","publish_date":"2024-10-31","item_4_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"京都工芸繊維大学"},{"subitem_text_value":"京都工芸繊維大学"}]},"item_4_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Kyoto Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Kyoto Institute of Technology","subitem_text_language":"en"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/240468/files/IPSJ-SLDM24206001.pdf","label":"IPSJ-SLDM24206001.pdf"},"date":[{"dateType":"Available","dateValue":"2026-10-31"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-SLDM24206001.pdf","filesize":[{"value":"1.2 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_date","version_id":"ee0e469f-e823-460b-af84-e846dd77b241","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2024 by the Information Processing Society of Japan"}]},"item_4_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"岩瀬, 朝生"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小林, 和淑"}],"nameIdentifiers":[{}]}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11451459","subitem_source_identifier_type":"NCID"}]},"item_4_textarea_12":{"attribute_name":"Notice","attribute_value_mlt":[{"subitem_textarea_value":"SIG Technical Reports are nonrefereed and hence may later appear in any journals, conferences, symposia, etc."}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_18gh","resourcetype":"technical report"}]},"item_4_source_id_11":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2188-8639","subitem_source_identifier_type":"ISSN"}]},"item_4_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"誤り訂正機能を持つ量子コンピュータの実現のために制御装置を希釈冷凍機内に配置する研究が進められている．その制御装置の中のキャッシュメモリとして現在は SRAM が使われているがそれに代わる低温環境に有利なメモリとして Gain Cell DRAM を提案する．","subitem_description_type":"Other"}]},"item_4_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"3","bibliographic_titles":[{"bibliographic_title":"研究報告システムとLSIの設計技術（SLDM）"}],"bibliographicPageStart":"1","bibliographicIssueDates":{"bibliographicIssueDate":"2024-10-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicVolumeNumber":"2024-SLDM-206"}]},"relation_version_is_last":true,"weko_creator_id":"44499"},"id":240468,"created":"2025-01-19T01:44:40.480566+00:00"}