{"created":"2025-01-19T01:41:21.040579+00:00","updated":"2025-01-19T08:37:41.027429+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00238240","sets":["6164:6165:7651:11699"]},"path":["11699"],"owner":"44499","recid":"238240","title":["低温・低電圧動作によるCMOSインバータの3値論理特性"],"pubdate":{"attribute_name":"公開日","attribute_value":"2024-08-21"},"_buckets":{"deposit":"8a416bd9-35f0-42ac-94f2-933c71390c08"},"_deposit":{"id":"238240","pid":{"type":"depid","value":"238240","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"低温・低電圧動作によるCMOSインバータの3値論理特性","author_link":["652296","652291","652294","652293","652295","652292"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"低温・低電圧動作によるCMOSインバータの3値論理特性"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"回路設計","subitem_subject_scheme":"Other"}]},"item_type_id":"18","publish_date":"2024-08-21","item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_18_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"大阪大学大学院情報科学研究科"},{"subitem_text_value":"大阪大学大学院情報科学研究科"},{"subitem_text_value":"大阪大学大学院情報科学研究科"},{"subitem_text_value":"大阪大学大学院情報科学研究科"},{"subitem_text_value":"京都工芸繊維大学大学院工芸科学研究科"},{"subitem_text_value":"大阪大学大学院情報科学研究科"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/238240/files/IPSJ-DAS2024016.pdf","label":"IPSJ-DAS2024016.pdf"},"date":[{"dateType":"Available","dateValue":"2026-08-21"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-DAS2024016.pdf","filesize":[{"value":"1.8 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_date","version_id":"728659ed-6792-44b0-bfaf-353d0c0115af","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2024 by the Information Processing Society of Japan"}]},"item_18_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"冨永, 孝太郎"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"松尾, 亮祐"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"御堂, 義博"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"三浦, 典之"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"新谷, 道広"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"塩見, 準"}],"nameIdentifiers":[{}]}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_5794","resourcetype":"conference paper"}]},"item_18_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"低温・低電圧環境で CMOS インバータを動作させた際に通常の CMOS インバータの出力特性(2 値論理動作)とは異なる 3 値論理動作が観測されることを示す.低温下ではサブスレッショルド係数が小さくなることで,サブスレッショルドリーク電流がほぼゼロになる.低電圧動作時に中間的な電圧を入力すると,CMOS インバータのトランジスタが両方ともオフ状態となり,ゲートリーク電流を介して CMOS インバータの入力と出力が導通する.その結果 CMOS インバータの出力が 3 値論理特性を示す.商用 65nm プロセスを用いた実験でこの 3 値論理特性を確認した.この特性を活用し,3 値を保持するメモリセルの実現可能性を議論する.","subitem_description_type":"Other"}]},"item_18_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"105","bibliographic_titles":[{"bibliographic_title":"DAシンポジウム2024論文集"}],"bibliographicPageStart":"100","bibliographicIssueDates":{"bibliographicIssueDate":"2024-08-21","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"2024"}]},"relation_version_is_last":true,"weko_creator_id":"44499"},"id":238240,"links":{}}