{"id":238237,"updated":"2025-01-19T08:37:44.075669+00:00","links":{},"created":"2025-01-19T01:41:20.747536+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00238237","sets":["6164:6165:7651:11699"]},"path":["11699"],"owner":"44499","recid":"238237","title":["4.2Kでの65nmバルクpMOSトランジスタにおけるランダムテレグラフノイズの評価"],"pubdate":{"attribute_name":"公開日","attribute_value":"2024-08-21"},"_buckets":{"deposit":"5da35eba-2745-4217-93e1-16376f85be67"},"_deposit":{"id":"238237","pid":{"type":"depid","value":"238237","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"4.2Kでの65nmバルクpMOSトランジスタにおけるランダムテレグラフノイズの評価","author_link":["652273","652271","652269","652274","652272","652270"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"4.2Kでの65nmバルクpMOSトランジスタにおけるランダムテレグラフノイズの評価"},{"subitem_title":"Random Telegraph Noise Observed on 65-nm Bulk pMOS Transistors at 4.2K","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"信頼性","subitem_subject_scheme":"Other"}]},"item_type_id":"18","publish_date":"2024-08-21","item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_18_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"京都大学大学院情報学研究科"},{"subitem_text_value":"京都大学大学院情報学研究科"},{"subitem_text_value":"京都大学大学院情報学研究科"}]},"item_18_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Graduate School of Informatics, Kyoto Uniersity","subitem_text_language":"en"},{"subitem_text_value":"Graduate School of Informatics, Kyoto Uniersity","subitem_text_language":"en"},{"subitem_text_value":"Graduate School of Informatics, Kyoto Uniersity","subitem_text_language":"en"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/238237/files/IPSJ-DAS2024013.pdf","label":"IPSJ-DAS2024013.pdf"},"date":[{"dateType":"Available","dateValue":"2026-08-21"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-DAS2024013.pdf","filesize":[{"value":"5.2 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_date","version_id":"1940c4ef-b108-45ca-83dc-4d94502c7722","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2024 by the Information Processing Society of Japan"}]},"item_18_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"川上, 拓真"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"佐藤, 高史"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"粟野, 皓光"}],"nameIdentifiers":[{}]}]},"item_18_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takuma, Kawakami","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takashi, Sato","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hiromitsu, Awano","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_5794","resourcetype":"conference paper"}]},"item_18_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"本論文では極低温における pMOS トランジスターのランダムテレグラフノイズを測定および統計的に評価する．65nm で試作されたトランジスタアレイである BTIarray を用いて，室温から 4.2K までのランダムテレグラフノイズを測定した．実験結果から，ランダムテレグラフノイズの影響は 100K 程度で最も小さくなり，さらに温度を極低温に下げていくと再びランダムテレグラフノイズの影響が大きくなることが示された．また，この現象はトランジスタのチャネル長が短いほど顕著に現れた．本研究の発見は高い可用性が要求されるハイパフォーマンスコンピューティング等に極低温 CMOS 技術を適用する際の基礎的な知見といえる．","subitem_description_type":"Other"}]},"item_18_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"This paper presents a measurement and statistical evaluation of random telegraphic noise of pMOS transistors at cryogenic temperatures. We measured random telegraphic noise from room temperature to 4.2 K using a BTIarray, a prototype transistor array fabricated at 65 nm. The measurement results suggest that while RTN's impact diminishes in the low-temperature region around 100K, it becomes more pronounced in the extreme low-temperature region below that, especially for transistors with shorter channel lengths. This research contributes to the understanding of RTN behavior under cryogenic conditions, providing valuable insights for future IC design.","subitem_description_type":"Other"}]},"item_18_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"85","bibliographic_titles":[{"bibliographic_title":"DAシンポジウム2024論文集"}],"bibliographicPageStart":"79","bibliographicIssueDates":{"bibliographicIssueDate":"2024-08-21","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"2024"}]},"relation_version_is_last":true,"weko_creator_id":"44499"}}