{"updated":"2025-01-19T10:01:08.429584+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00233698","sets":["1164:10193:11470:11538"]},"path":["11538"],"owner":"44499","recid":"233698","title":["熱の影響を取り込んだシリコン二重量子ドットのモデル化とシミュレータの開発"],"pubdate":{"attribute_name":"公開日","attribute_value":"2024-03-21"},"_buckets":{"deposit":"f08fdf98-ac2c-4648-8fb5-7d83424191aa"},"_deposit":{"id":"233698","pid":{"type":"depid","value":"233698","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"熱の影響を取り込んだシリコン二重量子ドットのモデル化とシミュレータの開発","author_link":["635366","635362","635367","635360","635365","635363","635364","635361"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"熱の影響を取り込んだシリコン二重量子ドットのモデル化とシミュレータの開発"}]},"item_type_id":"4","publish_date":"2024-03-21","item_4_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"神戸大学"},{"subitem_text_value":"神戸大学"},{"subitem_text_value":"日立製作所"},{"subitem_text_value":"日立製作所"},{"subitem_text_value":"日立製作所"},{"subitem_text_value":"神戸大学"},{"subitem_text_value":"神戸大学"},{"subitem_text_value":"日立製作所"}]},"item_4_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Kobe 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侑弥"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木澤, 祐人"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"宮本, 篤志"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"宇津木, 健"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"吉村, 地尋"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"三木, 拓司"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"永田, 真"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"水野, 弘之"}],"nameIdentifiers":[{}]}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12894105","subitem_source_identifier_type":"NCID"}]},"item_4_textarea_12":{"attribute_name":"Notice","attribute_value_mlt":[{"subitem_textarea_value":"SIG Technical Reports are nonrefereed and hence may later appear in any journals, conferences, symposia, etc."}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_18gh","resourcetype":"technical report"}]},"item_4_source_id_11":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2435-6492","subitem_source_identifier_type":"ISSN"}]},"item_4_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"シリコン量子コンピュータは，既存の半導体製造技術を応用可能であることから大規模集積量子コンピュータの実現における有力な候補である．しかし，量子ビットの集積化が進むと量子ビット動作時の発熱や制御配線からの熱流入が増え，それにより制御忠実度の低下が懸念される．そこで，量子ビットの測定において熱がどのような影響を与えるかを分析し，対処することが重要である．測定に用いる二重量子ドットはハバード模型を用いてモデル化できることが知られているが，熱の影響を取り込む方法は検討されてこなかった．そこで，本研究ではグランドカノニカル分布を用いて二重量子ドットモデルに熱の影響を取り込む手法を提案した．また，提案したモデルを用いて二重量子ドットのパラメータ分析や測定手順決定に繋がる charge stability diagram をシミュレーションした．これにより，デバイス設計へのフィードバックや測定手順の最適化に繋がることが期待される．","subitem_description_type":"Other"}]},"item_4_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"8","bibliographic_titles":[{"bibliographic_title":"研究報告量子ソフトウェア（QS）"}],"bibliographicPageStart":"1","bibliographicIssueDates":{"bibliographicIssueDate":"2024-03-21","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"24","bibliographicVolumeNumber":"2024-QS-11"}]},"relation_version_is_last":true,"weko_creator_id":"44499"},"created":"2025-01-19T01:35:13.749207+00:00","id":233698,"links":{}}