{"created":"2025-01-19T01:28:02.146700+00:00","updated":"2025-01-19T11:40:39.473384+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00228903","sets":["1164:2036:11089:11372"]},"path":["11372"],"owner":"44499","recid":"228903","title":["高周波差動GSSG PADにおける電磁界シミュレーションのグランド定義の差に起因するSパラメータの違いの解析"],"pubdate":{"attribute_name":"公開日","attribute_value":"2023-11-10"},"_buckets":{"deposit":"bc439c7d-2eda-439f-8af1-0a59daf26edf"},"_deposit":{"id":"228903","pid":{"type":"depid","value":"228903","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"高周波差動GSSG PADにおける電磁界シミュレーションのグランド定義の差に起因するSパラメータの違いの解析","author_link":["614668","614667","614669","614666","614671","614670","614672","614665"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"高周波差動GSSG PADにおける電磁界シミュレーションのグランド定義の差に起因するSパラメータの違いの解析"},{"subitem_title":"Analysis for S-parameter differences caused by differences in ground definitions for electromagnetic simulations in high-frequency differential GSSG PADs\\n","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ハードウェアセキュリティ・高周波","subitem_subject_scheme":"Other"}]},"item_type_id":"4","publish_date":"2023-11-10","item_4_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"広島大学大学院先進理工系科学研究科"},{"subitem_text_value":"広島大学大学院先進理工系科学研究科"},{"subitem_text_value":"広島大学大学院先進理工系科学研究科"},{"subitem_text_value":"広島大学大学院先進理工系科学研究科"}]},"item_4_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Graduate School of Advanced Science and Engineering, Hiroshima University","subitem_text_language":"en"},{"subitem_text_value":"Graduate School of Advanced Science and Engineering, Hiroshima University","subitem_text_language":"en"},{"subitem_text_value":"Graduate School of Advanced Science and Engineering, Hiroshima University","subitem_text_language":"en"},{"subitem_text_value":"Graduate School of Advanced Science and Engineering, Hiroshima University","subitem_text_language":"en"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/228903/files/IPSJ-SLDM23204036.pdf","label":"IPSJ-SLDM23204036.pdf"},"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-SLDM23204036.pdf","filesize":[{"value":"2.1 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_login","version_id":"80179548-18ec-4781-8cf9-1cefeba1d12a","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2023 by the Institute of Electronics, Information and Communication Engineers This SIG report is only available to those in membership of the SIG."}]},"item_4_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"杉本, 椋汰朗"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"田中, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"吉田, 毅"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"藤島, 実"}],"nameIdentifiers":[{}]}]},"item_4_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ryotaro, Sugimoto","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Satoshi, Tanaka","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takeshi, Yoshida","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Minoru, Fujishima","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11451459","subitem_source_identifier_type":"NCID"}]},"item_4_textarea_12":{"attribute_name":"Notice","attribute_value_mlt":[{"subitem_textarea_value":"SIG Technical Reports are nonrefereed and hence may later appear in any journals, conferences, symposia, etc."}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_18gh","resourcetype":"technical report"}]},"item_4_source_id_11":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2188-8639","subitem_source_identifier_type":"ISSN"}]},"item_4_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"毎秒 100 ギガビットの高速通信を実現する 300GHz 帯で動作するトランシーバ回路を実現するにはオンチップ上の伝送線路のみならず，実装基板上の伝送線路も有効に活用することが重要である．本報告では差動信号をチップと基板間でやり取りする PAD 構造について検討する．高周波用の PAD としては 2 つの接地 PAD に信号線 PAD を挟む GSG PAD が良く用いられる．しかし例えばチップ上の差動配線を基板に移し，再びチップに戻すなど，複雑な構成をとる場合には，サイズの小型化の観点から GSSG PAD が望ましい．GSSG PAD の特性を確認するには電磁界シミュレーションによる PAD 部の散乱行列 (S) パラメータの抽出が必要である．電磁界シミュレーションでは接地端子の定義により，求められる S パラメータが異なる．本報告では S パラメータが異なる事について考察する．","subitem_description_type":"Other"}]},"item_4_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"In order to realize transceiver circuits operating in the 300-GHz band, which can achieve 100-Gigabit-per-second high-speed communications, it is important to effectively utilize not only the transmission lines on the chip but also those on the mounting board. In this report, we discuss a PAD structure that exchanges differential signals between a chip and a substrate. The GSG PAD, in which a signal line PAD is sandwiched between two ground PADs, is often used as a PAD for high-frequency applications. To confirm the characteristics of the GSSG PAD, it is necessary to extract the scattering matrix (S) parameters of the PAD section by electromagnetic field simulation. In the electromagnetic field simulation, the S-parameters to be extracted are different depending on the definition of the ground terminal. This paper discusses the different S-parameters.","subitem_description_type":"Other"}]},"item_4_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"5","bibliographic_titles":[{"bibliographic_title":"研究報告システムとLSIの設計技術（SLDM）"}],"bibliographicPageStart":"1","bibliographicIssueDates":{"bibliographicIssueDate":"2023-11-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"36","bibliographicVolumeNumber":"2023-SLDM-204"}]},"relation_version_is_last":true,"weko_creator_id":"44499"},"id":228903,"links":{}}