{"id":228872,"updated":"2025-01-19T11:41:14.841069+00:00","links":{},"created":"2025-01-19T01:28:00.357585+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00228872","sets":["1164:2036:11089:11372"]},"path":["11372"],"owner":"44499","recid":"228872","title":["フローティングゲートおよびチャージトラップTLC NANDフラッシュメモリにおけるトータルドーズ効果のデータパターン依存性"],"pubdate":{"attribute_name":"公開日","attribute_value":"2023-11-10"},"_buckets":{"deposit":"c808c6c0-768f-47e8-964e-13c0ec8d3132"},"_deposit":{"id":"228872","pid":{"type":"depid","value":"228872","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"フローティングゲートおよびチャージトラップTLC NANDフラッシュメモリにおけるトータルドーズ効果のデータパターン依存性","author_link":["614435","614439","614436","614440","614438","614437"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"フローティングゲートおよびチャージトラップTLC NANDフラッシュメモリにおけるトータルドーズ効果のデータパターン依存性"},{"subitem_title":"Data Pattern Dependence of the Total Ionizing Dose Effect in Floating-gate and Charge-trap TLC NAND flash memories","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"信頼性 ","subitem_subject_scheme":"Other"}]},"item_type_id":"4","publish_date":"2023-11-10","item_4_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"京都工芸繊維大学"},{"subitem_text_value":"京都工芸繊維大学"},{"subitem_text_value":"京都工芸繊維大学"}]},"item_4_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Kyoto Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Kyoto Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Kyoto Institute of Technology","subitem_text_language":"en"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/228872/files/IPSJ-SLDM23204005.pdf","label":"IPSJ-SLDM23204005.pdf"},"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-SLDM23204005.pdf","filesize":[{"value":"1.2 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_login","version_id":"529df8be-4745-4871-a1e3-8f5c7dd5798d","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2023 by the Institute of Electronics, Information and Communication Engineers This SIG report is only available to those in membership of the SIG."}]},"item_4_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"小澤, 太希"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"古田, 潤"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小林, 和淑"}],"nameIdentifiers":[{}]}]},"item_4_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Taiki, Ozawa","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jun, Furuta","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kazutoshi, Kobayashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11451459","subitem_source_identifier_type":"NCID"}]},"item_4_textarea_12":{"attribute_name":"Notice","attribute_value_mlt":[{"subitem_textarea_value":"SIG Technical Reports are nonrefereed and hence may later appear in any journals, conferences, symposia, etc."}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_18gh","resourcetype":"technical report"}]},"item_4_source_id_11":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2188-8639","subitem_source_identifier_type":"ISSN"}]},"item_4_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"宇宙機に搭載する不揮発性メモリとして，NAND フラッシュメモリが注目されている．宇宙に存在する多量の放射線によりデバイスの劣化や故障を引き起こすため，耐性の評価が必要とされている．本稿では，フローティングゲート型フラッシュメモリとチャージトラップ型フラッシュメモリを用いて，ガンマ線照射によるしきい値電圧の変化を測定し，データパターンごとのトータルドーズ効果 (TID) 特性の比較を行った．測定の結果，チャージトラップ型の TID 特性はフローティングゲート型より，データパターンに大きく依存する．チャージトラップ型ではセルのしきい値電圧が小さいデータパターンでは，高い TID 耐性を持つが，しきい値電圧が大きくなるにつれて，急激に TID 耐性は低くなる．","subitem_description_type":"Other"}]},"item_4_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"The NAND flash memory is attracting attention as nonvolatile memory for spacecraft. Since the large amount of radiation in space causes device degradation and failure, device resistance must be evaluated. In this paper, we measured the change in threshold voltage due to gamma-ray irradiation using floating gate flash memory devices and charge trap flash memory, and compared the Total Ionizing Dose Effect (TID) characteristics for each data pattern. The measurement results show that the TID characteristics of the charge trap type are more dependent on the data pattern than those of the floating gate type. The charge trap type has high TID tolerance for data patterns with small cell threshold voltages, but as the threshold voltage increases, the TID tolerance rapidly decreases.","subitem_description_type":"Other"}]},"item_4_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"6","bibliographic_titles":[{"bibliographic_title":"研究報告システムとLSIの設計技術（SLDM）"}],"bibliographicPageStart":"1","bibliographicIssueDates":{"bibliographicIssueDate":"2023-11-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicVolumeNumber":"2023-SLDM-204"}]},"relation_version_is_last":true,"weko_creator_id":"44499"}}