{"created":"2025-01-19T01:27:58.751090+00:00","updated":"2025-01-19T11:41:55.104347+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00228844","sets":["1164:2036:11089:11357"]},"path":["11357"],"owner":"44499","recid":"228844","title":["低動作電圧なCMOS-MEMSスイッチの試作と評価"],"pubdate":{"attribute_name":"公開日","attribute_value":"2023-10-31"},"_buckets":{"deposit":"a65b5cec-2b0c-490e-b346-800c96c4025b"},"_deposit":{"id":"228844","pid":{"type":"depid","value":"228844","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"低動作電圧なCMOS-MEMSスイッチの試作と評価","author_link":["614295","614296"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"低動作電圧なCMOS-MEMSスイッチの試作と評価"},{"subitem_title":"Prototyping and evaluation of CMOS-MEMS switches with low operating voltage","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ポスター","subitem_subject_scheme":"Other"}]},"item_type_id":"4","publish_date":"2023-10-31","item_4_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東京電機大学"},{"subitem_text_value":"東京電機大学"}]},"item_4_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Tokyo Denki University","subitem_text_language":"en"},{"subitem_text_value":"Tokyo Denki University","subitem_text_language":"en"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/228844/files/IPSJ-SLDM23203009.pdf","label":"IPSJ-SLDM23203009.pdf"},"date":[{"dateType":"Available","dateValue":"2025-10-31"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-SLDM23203009.pdf","filesize":[{"value":"625.7 kB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_date","version_id":"ce5c8adc-6503-4ec5-905f-4e26ea58231c","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2023 by the Information Processing Society of Japan"}]},"item_4_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"後河内, 駿介"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小松, 聡"}],"nameIdentifiers":[{}]}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11451459","subitem_source_identifier_type":"NCID"}]},"item_4_textarea_12":{"attribute_name":"Notice","attribute_value_mlt":[{"subitem_textarea_value":"SIG Technical Reports are nonrefereed and hence may later appear in any journals, conferences, symposia, etc."}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_18gh","resourcetype":"technical report"}]},"item_4_source_id_11":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2188-8639","subitem_source_identifier_type":"ISSN"}]},"item_4_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"近年，モバイル通信システムにおける 5G の普及により，RF スイッチの周波数範囲やスイッチング時間，制御電圧，信頼性などの仕様要件が求められている．半導体製品の RF スイッチの代替に向けた RF-MEMS スイッチが注目されているが，5G システムで主に求められる 5V 程度の低動作電圧，良好な RF 特性，信頼性の 3 点に優れた RFMEMS スイッチの実現が課題となっている．そこで，コプレーナ導波路，メンブレン，およびワイドビームで構成された RF-MEMS 容量性シャントスイッチが提案されている．本研究では，MEMS スイッチの固着状態を防ぐ設計をすることで信頼性の確保を目的とする．提案手法として，メンブレンの両端にばねを設計することで復元力により固着状態の改善を目標とする．本研究ではばねとメンブレンで構成した上部電極と引き下げ電極で構成された MEMS スイッチをオン・セミコンダクタ―社の CMOS0.8μm を用いて設計した．現段階では，ファウンドリによって完成したチップをウェットエッチングで MEMS 構造を解放した．今後の構想として，試作した MEMS スイッチに電圧を印加した時に，下部電極とメンブレンの接触状態，非接触状態が確立出来ているか，設計したワイドビームが固着状態を防いでいるか確認し，MEMS スイッチの性能向上を設計面の観点から研究する方針である．また，RF性能を確かめるため，RF 信号伝送時の絶縁性，挿入損失についても測定する方針である．","subitem_description_type":"Other"}]},"item_4_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"3","bibliographic_titles":[{"bibliographic_title":"研究報告システムとLSIの設計技術（SLDM）"}],"bibliographicPageStart":"1","bibliographicIssueDates":{"bibliographicIssueDate":"2023-10-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicVolumeNumber":"2023-SLDM-203"}]},"relation_version_is_last":true,"weko_creator_id":"44499"},"id":228844,"links":{}}