{"id":227400,"updated":"2025-01-19T12:11:10.086426+00:00","links":{},"created":"2025-01-19T01:26:40.001634+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00227400","sets":["6164:6165:7651:11316"]},"path":["11316"],"owner":"44499","recid":"227400","title":["Gain-Cell構造に基づく完全合成可能なスタンダードセルベースDRAM"],"pubdate":{"attribute_name":"公開日","attribute_value":"2023-08-23"},"_buckets":{"deposit":"a29a4c02-6355-478b-b3ba-6f5886281122"},"_deposit":{"id":"227400","pid":{"type":"depid","value":"227400","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"Gain-Cell構造に基づく完全合成可能なスタンダードセルベースDRAM","author_link":["605749","605748","605747"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Gain-Cell構造に基づく完全合成可能なスタンダードセルベースDRAM"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"ニア／インメモリコンピューティング，ポスター","subitem_subject_scheme":"Other"}]},"item_type_id":"18","publish_date":"2023-08-23","item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_18_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"名古屋大学大学院情報学研究科"},{"subitem_text_value":"名古屋大学大学院情報学研究科"},{"subitem_text_value":"名古屋大学大学院情報学研究科"}]},"item_18_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Graduate School of Informatics, Nagoya University","subitem_text_language":"en"},{"subitem_text_value":"Graduate School of Informatics, Nagoya University","subitem_text_language":"en"},{"subitem_text_value":"Graduate School of Informatics, Nagoya University","subitem_text_language":"en"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/227400/files/IPSJ-DAS2023035.pdf","label":"IPSJ-DAS2023035.pdf"},"date":[{"dateType":"Available","dateValue":"2025-08-23"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-DAS2023035.pdf","filesize":[{"value":"1.4 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_date","version_id":"90efb883-763a-45c7-a8fe-2f60467538cf","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2023 by the Information Processing Society of Japan"}]},"item_18_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"陳, 岱鋒"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"増田, 豊"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"石原, 亨"}],"nameIdentifiers":[{}]}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_5794","resourcetype":"conference paper"}]},"item_18_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"大量のメモリを使用する AI 処理などの計算では，メモリの直近で計算を行う Near-memory 計算や In-memory 計算が処理全体の消費エネルギーを削減する有力な計算方式の一つと考えられている．しかしながら，既存の高速メモリの中で最も集積度が高い DRAMは，ロジックプロセスとの互換性が低いため Near-memory 計算に適していない．本稿では，並列演算器の近傍に分散的にメモリを配置することを可能にするスタンダードセルベース DRAM の構成法を提案する．ビットセルには Gain-Cell DRAM と呼ばれるメモリ構造を使用する．Gain-Cell DRAM は完全ロジックプロセス互換であり，最低 2 個のトランジスタで構成できるため高い集積度のメモリを並列演算器の直近に分散配置可能である．また，メモリをスタンダードセル化することにより演算器とメモリを含む回路全体を完全合成可能（Fully-synthesizable）にできる．評価実験の結果，提案する構成法で設計したスタンダードセルベース DRAM は既存のスタンダードセルメモリと比べて大幅に面積効率を改善することを確認した．","subitem_description_type":"Other"}]},"item_18_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"227","bibliographic_titles":[{"bibliographic_title":"DAシンポジウム2023論文集"}],"bibliographicPageStart":"221","bibliographicIssueDates":{"bibliographicIssueDate":"2023-08-23","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"2023"}]},"relation_version_is_last":true,"weko_creator_id":"44499"}}