{"updated":"2025-01-19T14:53:16.394626+00:00","links":{},"metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00219207","sets":["6164:6165:7651:10964"]},"path":["10964"],"owner":"44499","recid":"219207","title":["MOSFETの弱反転領域電流の統計的性質を利用する温度センシング手法"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-08-24"},"_buckets":{"deposit":"b3411551-a7e5-40af-9ca9-497c1ef56f57"},"_deposit":{"id":"219207","pid":{"type":"depid","value":"219207","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"MOSFETの弱反転領域電流の統計的性質を利用する温度センシング手法","author_link":["571552","571550","571553","571554","571548","571551","571549","571547"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"MOSFETの弱反転領域電流の統計的性質を利用する温度センシング手法"},{"subitem_title":"Temperature sensing method utilizing a statistical property of sub-threshold MOSFET currents","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"回路設計","subitem_subject_scheme":"Other"}]},"item_type_id":"18","publish_date":"2022-08-24","item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_18_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"京都大学大学院工学研究科電気工学専攻和田研究室"},{"subitem_text_value":"京都大学大学院工学研究科電気工学専攻和田研究室"},{"subitem_text_value":"京都大学大学院工学研究科電気工学専攻和田研究室"},{"subitem_text_value":"京都大学大学院工学研究科電気工学専攻和田研究室"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/219207/files/IPSJ-DAS2022035.pdf","label":"IPSJ-DAS2022035.pdf"},"date":[{"dateType":"Available","dateValue":"2024-08-24"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-DAS2022035.pdf","filesize":[{"value":"2.3 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_date","version_id":"413721da-7465-4240-9183-2f104b82040a","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2022 by the Information Processing Society of Japan"}]},"item_18_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"太田, 慎一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"イスラム, マーフズル"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"久門, 尚史"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"和田, 修己"}],"nameIdentifiers":[{}]}]},"item_18_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Shinichi, Ota","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mahfuzul, Islam","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takashi, Hisakado","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Osami, Wada","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_5794","resourcetype":"conference paper"}]},"item_18_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"本稿では，弱反転領域で動作する MOSFET のドレイン電流にみられる統計的性質の温度依存性を利用する温度推定手法を提案する．MOSFET の弱反転領域特性を利用することで低消費電力動作を実現しつつ，MOSFET のドレイン電流の統計量を利用することで電源電圧変動による影響を低減できる．6 チップについて測定を行う．商用の 65nm プロセスにて実装した6チップの測定において，二点校正後に -20℃ から 120℃ の温度領域で -0.54/0.43℃ の測定エラーが確認され，これは先行研究で提案されてきた同方式の温度センサと比較すると広範囲かつ高精度を実現している．また，電源電圧依存性は 20℃ で最大 3.5℃/V であり，提案手法により微細プロセスにて高精度でありながらより低い電源電圧依存性を実現できる．","subitem_description_type":"Other"}]},"item_18_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"We propose a novel temperature sensing method utilizing a temperature dependant statistical property of MOSFET currents in the sub-threshold region. The proposed method achieves low power consumption by using MOSFETs in the sub-threshold region. In addition, the measured statistical property is independent of supply voltage, thus making the sensor suitable for wide voltage operation. A circuit using the proposed method is designed and fabricated in a commercial 65nm process. Our measurements across 6 chips show that, after a 2-point calibration, the proposed sensor has a temperature sensing inaccuracy within -0.54/0.43℃ from -20℃ to 120℃, showing the sensor has a wider range and higher accuracy compared to previous works utilizing sub-threshold MOSFETs. The proposed sensor also has a maximum supply dependency of 3.5℃/V at 20℃, showing that the sensor is capable of better accuracy and lower supply voltage dependency even at a scaled process.","subitem_description_type":"Other"}]},"item_18_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"206","bibliographic_titles":[{"bibliographic_title":"DAシンポジウム2022論文集"}],"bibliographicPageStart":"201","bibliographicIssueDates":{"bibliographicIssueDate":"2022-08-24","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"2022"}]},"relation_version_is_last":true,"weko_creator_id":"44499"},"id":219207,"created":"2025-01-19T01:19:31.645294+00:00"}