@inproceedings{oai:ipsj.ixsq.nii.ac.jp:00219200,
 author = {藤本, 耕太 and 蜂屋, 孝太郎 and Kouta, Fujimoto and Koutaro, Hachiya},
 book = {DAシンポジウム2022論文集},
 month = {Aug},
 note = {3D-IC における電源 TSV (Through Silicon Via) のオープン故障を検出するために TSV 直下のパッド間抵抗を測定する際，診断性能が最大となる測定箇所を選択する．従来は，しらみつぶし法により真の最適解を求めたり，山登り法により近似解を求めたりしていた．本発表では，近傍しらみつぶし法を提案し，解や実行時間を従来法と比較する．山登り法では最適解と比べ診断性能 RMD が 2.4% 程度以下の低下がみられたが，しらみつぶし法に比べ約 11 倍の高速化が得られた．今回提案する近傍しらみつぶし法では全体の4%程度を除き最適解が得られ（RMD 誤差 0.3% 以下），しらみつぶし法に比べ約 9.7 倍の高速化が得られた．, When measuring the resistance between pads directly under the power TSVs (Through Silicon Vias) in a 3D-IC to detect their open failures, the measurement point selection is crucial for maximizing diagnostic performance. In the previous papers, Exhaustive Search is applied to get the optimal solution, or alternatively Hill Climbing is applied to get the near optimal solution. In this paper, we propose Neighborhood Exhaustive Search and compare its solution and execution time with the conventional search methods. Hill Climbing shows a decrease in diagnostic performance RMD of about 2.4% or less compared to the optimal solution, but it was about 11 times faster than the Exhaustive Search. The proposed Neighborhood Exhaustive Search derives the optimal solutions in most of the cases (RMD error is less than 0.3%), and the speed is about 9.7 times faster than Exhaustive Search.},
 pages = {162--166},
 publisher = {情報処理学会},
 title = {電源TSV検査のための抵抗測定箇所最適化アルゴリズムの比較},
 volume = {2022},
 year = {2022}
}