{"id":217114,"updated":"2025-01-19T15:37:05.502075+00:00","links":{},"created":"2025-01-19T01:17:37.200124+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00217114","sets":["1164:1579:10818:10892"]},"path":["10892"],"owner":"44499","recid":"217114","title":["不揮発性FFを用いたCGRA設計探索のためのばらつきを考慮したMTJへの書き込みエネルギー推定モデルの提案"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-03-03"},"_buckets":{"deposit":"00407ac8-aef9-4d17-b143-3f0b2130b00e"},"_deposit":{"id":"217114","pid":{"type":"depid","value":"217114","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"不揮発性FFを用いたCGRA設計探索のためのばらつきを考慮したMTJへの書き込みエネルギー推定モデルの提案","author_link":["561841","561836","561840","561835","561838","561842","561843","561837","561839"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"不揮発性FFを用いたCGRA設計探索のためのばらつきを考慮したMTJへの書き込みエネルギー推定モデルの提案"},{"subitem_title":"A Variation-Aware MTJ Store Energy Estimation Model for Design Exploration of CGRA with Nonvolatile Flip-Flops","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"設計技術","subitem_subject_scheme":"Other"}]},"item_type_id":"4","publish_date":"2022-03-03","item_4_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"慶應義塾大学大学院理工学研究科"},{"subitem_text_value":"慶應義塾大学大学院理工学研究科"},{"subitem_text_value":"東京大学大学院情報理工学系研究科"},{"subitem_text_value":"芝浦工業大学大学院理工学研究科"},{"subitem_text_value":"芝浦工業大学大学院理工学研究科"},{"subitem_text_value":"芝浦工業大学大学院理工学研究科"},{"subitem_text_value":"ソニーセミコンダクタソリューションズ株式会社"},{"subitem_text_value":"ソニーセミコンダクタソリューションズ株式会社"},{"subitem_text_value":"ソニーセミコンダクタソリューションズ株式会社"}]},"item_4_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Keio University","subitem_text_language":"en"},{"subitem_text_value":"Keio University","subitem_text_language":"en"},{"subitem_text_value":"The University of Tokyo","subitem_text_language":"en"},{"subitem_text_value":"Shibaura Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Shibaura Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Shibaura Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Sony Semiconductor Solutions Corporation","subitem_text_language":"en"},{"subitem_text_value":"Sony Semiconductor Solutions Corporation","subitem_text_language":"en"},{"subitem_text_value":"Sony Semiconductor Solutions Corporation","subitem_text_language":"en"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing 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愛佳"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"天野, 英晴"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小島, 拓也"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"横山, 大輝"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"宮内, 陽里"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"宇佐美, 公良"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"平賀, 啓三"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鈴木, 健太"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"別所, 和宏"}],"nameIdentifiers":[{}]}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10096105","subitem_source_identifier_type":"NCID"}]},"item_4_textarea_12":{"attribute_name":"Notice","attribute_value_mlt":[{"subitem_textarea_value":"SIG Technical Reports are nonrefereed and hence may later appear in any journals, conferences, symposia, etc."}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_18gh","resourcetype":"technical report"}]},"item_4_source_id_11":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2188-8574","subitem_source_identifier_type":"ISSN"}]},"item_4_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"粗粒度再構成可能アーキテクチャ CGRA は電力効率に優れたデバイスであり，さらに磁気トンネル接合（MTJ）ベースの不揮発性フリップフロップ（NVFF）を利用した NV Power Gating と組み合わせることで非稼働時の静的消費電力を削減できるため，バッテリ駆動を強いられるエッジ環境におけるアクセラレータとして期待される．我々は過去に，MTJ ベース NVFF の欠点である大きいストアエネルギーを削減するための改良版 NVFF を採用した CGRA を提案し，実チップ評価により一定の条件におけるエネルギーの削減効果を示した．しかし，ストアエネルギーは動作電圧，周波数及びストアする NVFF の数といったアプリケーションごとに異なる条件に依存するため，条件ごとに最適な NVFF やストア手法を選択することが必要である．ただし，あらゆる条件で実機測定を行うは非効率的であり，また，わずかな設計変更を反映したチップを再実装することは現実的に難しい．本研究では，様々な条件下における MTJ へのストアエネルギーを算出可能なモデル式を提案する．ストア時間を設定するために必要な MTJ のスイッチング遅延時間の推定については，本質的にばらつきを含む確率的な量であるため，実測結果に対する近似を用いて解析的に算出する手法を提案し，エネルギー推定モデルに組み込んだ．提案モデルは，最適なストア手法の選択において，実測結果と同様の判断を導くことが可能であることから，十分な実用性を持つと言える．","subitem_description_type":"Other"}]},"item_4_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"7","bibliographic_titles":[{"bibliographic_title":"研究報告システム・アーキテクチャ（ARC）"}],"bibliographicPageStart":"1","bibliographicIssueDates":{"bibliographicIssueDate":"2022-03-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"26","bibliographicVolumeNumber":"2022-ARC-248"}]},"relation_version_is_last":true,"weko_creator_id":"44499"}}