{"created":"2025-01-19T01:14:51.014719+00:00","updated":"2025-01-19T16:56:08.463640+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00214012","sets":["1164:2036:10484:10753"]},"path":["10753"],"owner":"44499","recid":"214012","title":["データアウェア・ストア機能を持つMTJベース不揮発性SRAM回路の提案と評価"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-11-24"},"_buckets":{"deposit":"84165c3c-ff21-4163-935d-69f52d393433"},"_deposit":{"id":"214012","pid":{"type":"depid","value":"214012","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"データアウェア・ストア機能を持つMTJベース不揮発性SRAM回路の提案と評価","author_link":["548247","548246","548245","548244"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"データアウェア・ストア機能を持つMTJベース不揮発性SRAM回路の提案と評価"},{"subitem_title":"MTJ-based non-volatile SRAM circuit with data-aware store control for energy saving","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"低電力回路技術およびソフトエラー対策","subitem_subject_scheme":"Other"}]},"item_type_id":"4","publish_date":"2021-11-24","item_4_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"芝浦工業大学大学院理工学研究科電気電子情報工学専攻"},{"subitem_text_value":"芝浦工業大学工学部情報工学科"}]},"item_4_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Graduate School of Engineering and Science, Shibaura Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Department of Computer Science and Engineering, Shibaura Institute of Technology ","subitem_text_language":"en"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/214012/files/IPSJ-SLDM21196003.pdf","label":"IPSJ-SLDM21196003.pdf"},"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-SLDM21196003.pdf","filesize":[{"value":"2.4 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_login","version_id":"a6bc8b0d-6414-4b01-a65d-1cb5dfe95fce","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2021 by the Institute of Electronics, Information and Communication Engineers This SIG report is only available to those in membership of the SIG."}]},"item_4_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"宮内, 陽里"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"宇佐美, 公良"}],"nameIdentifiers":[{}]}]},"item_4_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hisato, Miyauchi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kimiyoshi, Usami","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11451459","subitem_source_identifier_type":"NCID"}]},"item_4_textarea_12":{"attribute_name":"Notice","attribute_value_mlt":[{"subitem_textarea_value":"SIG Technical Reports are nonrefereed and hence may later appear in any journals, conferences, symposia, etc."}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_18gh","resourcetype":"technical report"}]},"item_4_source_id_11":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2188-8639","subitem_source_identifier_type":"ISSN"}]},"item_4_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"近年，LSI のリーク電力の増大が問題となっており，その削減手法の 1 つに，磁気トンネル接合 (MTJ：Magnetic Tunnel Junction) 素子を利用した不揮発性パワーゲーティング (NVPG：Non Volatile Power Gating) がある．NVPG では，SRAM のような揮発性の記憶回路を MTJ によって不揮発化することで，PG によってデータが保持出来ない問題を解決している．しかし，MTJ は書き込みエネルギーが大きいという問題がある．そのため，本研究では，現在書き込まれている値と同値であれば MTJ への書き込みをスキップする機能（DAS : Data Aware Store）を備えることにより，低消費エネルギーを実現する SRAM を提案し，65nm プロセスでのシミュレーション評価を行った．","subitem_description_type":"Other"}]},"item_4_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"In recent years, the increase of leakage power in LSIs has become a problem, and one of the methods to reduce the leakage power is Non-Volatile Power Gating (NVPG) using Magnetic Tunnel Junction (MTJ) devices. In NVPG, volatile storage circuits such as SRAM are made non-volatile by MTJ, thereby solving the problem of data retention by PG. However, MTJ has a problem of high write energy. In this study, we proposed an SRAM with low energy consumption by equipping it with a function that skips writing to MTJ if the value is the same as the currently written value (DAS: Data Aware Store), and conducted simulation evaluation in a 65nm process.","subitem_description_type":"Other"}]},"item_4_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"6","bibliographic_titles":[{"bibliographic_title":"研究報告システムとLSIの設計技術（SLDM）"}],"bibliographicPageStart":"1","bibliographicIssueDates":{"bibliographicIssueDate":"2021-11-24","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicVolumeNumber":"2021-SLDM-196"}]},"relation_version_is_last":true,"weko_creator_id":"44499"},"id":214012,"links":{}}