{"metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00212645","sets":["6164:6165:7651:10646"]},"path":["10646"],"owner":"44499","recid":"212645","title":["ELT(Enclosed Layout Transistor)による耐放射線CMOS集積回路の設計"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-08-25"},"_buckets":{"deposit":"8e8183ea-4646-4be0-8986-243e855c4619"},"_deposit":{"id":"212645","pid":{"type":"depid","value":"212645","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"ELT(Enclosed Layout Transistor)による耐放射線CMOS集積回路の設計","author_link":["542882","542894","542891","542883","542900","542884","542895","542893","542885","542887","542888","542881","542896","542886","542901","542902","542889","542897","542899","542898","542890","542892"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ELT(Enclosed Layout Transistor)による耐放射線CMOS集積回路の設計"},{"subitem_title":"Radiation-Hard CMOS Integrated Circuit Design with ELT (Enclosed Layout Transistor)","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"信頼性","subitem_subject_scheme":"Other"}]},"item_type_id":"18","publish_date":"2021-08-25","item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_18_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"東京工業大学科学技術創成研究院ナノセンシング研究ユニット／東京工業大学科学技術創成研究院未来産業技術研究所"},{"subitem_text_value":"東京工業大学科学技術創成研究院ナノセンシング研究ユニット"},{"subitem_text_value":"東京工業大学科学技術創成研究院ナノセンシング研究ユニット"},{"subitem_text_value":"東京工業大学科学技術創成研究院ナノセンシング研究ユニット"},{"subitem_text_value":"東京工業大学科学技術創成研究院ナノセンシング研究ユニット"},{"subitem_text_value":"東京工業大学科学技術創成研究院未来産業技術研究所"},{"subitem_text_value":"東京工業大学科学技術創成研究院未来産業技術研究所"},{"subitem_text_value":"東京工業大学科学技術創成研究院未来産業技術研究所"},{"subitem_text_value":"東京工業大学科学技術創成研究院未来産業技術研究所"},{"subitem_text_value":"東京工業大学科学技術創成研究院未来産業技術研究所"},{"subitem_text_value":"東京工業大学科学技術創成研究院ナノセンシング研究ユニット／東京工業大学科学技術創成研究院未来産業技術研究所"}]},"item_18_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Nano Sensing Unit, Institute of Innovative Research, Tokyo Institute of Technology / Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Innovative Research, Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Nano Sensing Unit, Institute of Innovative Research, Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Nano Sensing Unit, Institute of Innovative Research, Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Nano Sensing Unit, Institute of Innovative Research, Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Nano Sensing Unit, Institute of Innovative Research, Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Innovative Research, Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Innovative Research, Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Innovative Research, Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Innovative Research, Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Innovative Research, Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Nano Sensing Unit, Institute of Innovative Research, Tokyo Institute of Technology / Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Innovative Research, Tokyo Institute of Technology","subitem_text_language":"en"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/212645/files/IPSJ-DAS2021030.pdf","label":"IPSJ-DAS2021030.pdf"},"date":[{"dateType":"Available","dateValue":"2023-08-25"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-DAS2021030.pdf","filesize":[{"value":"2.2 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_date","version_id":"354fdb1b-0042-412a-ad29-dc597ec9850a","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2021 by the Information Processing Society of Japan"}]},"item_18_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"石原, 昇"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"吉田, 僚一郎"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木村, 有佐"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"安藤, 幹"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"大島, 佑太"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鍋屋, 信介"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"平川, 顕二"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"岩瀬, 正幸"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小笠原, 宗博"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 孝"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"伊藤, 浩之"}],"nameIdentifiers":[{}]}]},"item_18_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Noboru, Ishihara","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ryoichro, Yoshida","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Arisa, Kimura","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Motoki, Ando","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yuta, Oshima","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Shinsuke, Nabeya","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kenji, Hirakawa","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Masayuki, Iwase","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Munehiro, Ogasawara","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takashi, Yoda","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hiroyuki, Ito","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_5794","resourcetype":"conference paper"}]},"item_18_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"宇宙，原子力等の放射線照射環境への適用を目的として放射線耐性に優れる集積回路の研究開発が進められている．ELT (Enclosed Layout Transistor) は，通常の SLT（Stripe Layout Transistor）に比べ放射線耐性に優れるが，標準の集積回路のデザインキットでは，その特性モデルが提供されていない．本論文では，まず，0.18μm 技術による MOSFET への Co60γ線放照射結果（TID : Total Ionizing Dose Effect）について述べ，放射線耐性に優れる ELT を用いた CMOS 集積回路設計のための簡易的なトランジスタ特性モデルを明らかにする．具体的には SLT からの換算による ELT 直流特性モデルと，放射線照射によるしきい値，少数キャリア移動度，リーク電流への影響を考慮した簡易モデルを示す．さらに，作成モデルにより 1Grad の高放射線量までの影響を推定するとともに ELT による回路設計指針を示す．","subitem_description_type":"Other"}]},"item_18_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"Research and development of integrated circuits with radiation hardness are ongoing to apply to radiation-irradiated environments such as in space and in systems using radiation beams. The ELT (Enclosed Layout Transistor) is superior in radiation hardness compared to ordinary SLT (Stripe Layout Transistor), but its characteristic model is not provided in the standard integrated circuit design kit. In this paper, the results of Co60γ ray irradiation (TID: Total Ionizing Dose Effect) on the MOSFET's using the 0.18-μm technology are describe firstly, and then a simple MOS transistor model for integrated circuit design using ELT, which has radiation hardness. Specifically, an ELT DC characteristic model converted from SLT and a simple model considering the effects of irradiation on the threshold value, minority carrier mobility, and leakage current are shown. In addition to estimating the effect up to 1-Grad irradiation, the concept of circuit design with ELT is also introduced.","subitem_description_type":"Other"}]},"item_18_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"172","bibliographic_titles":[{"bibliographic_title":"DAシンポジウム2021論文集"}],"bibliographicPageStart":"167","bibliographicIssueDates":{"bibliographicIssueDate":"2021-08-25","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"2021"}]},"relation_version_is_last":true,"weko_creator_id":"44499"},"id":212645,"updated":"2025-01-19T17:26:04.737997+00:00","links":{},"created":"2025-01-19T01:13:34.855634+00:00"}