{"metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00212644","sets":["6164:6165:7651:10646"]},"path":["10646"],"owner":"44499","recid":"212644","title":["X線照射によるパワーMOSFETの特性変動の分析"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-08-25"},"_buckets":{"deposit":"4f04bdde-11d7-4570-87bc-590f2613cc73"},"_deposit":{"id":"212644","pid":{"type":"depid","value":"212644","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"X線照射によるパワーMOSFETの特性変動の分析","author_link":["542880","542878","542877","542879"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"X線照射によるパワーMOSFETの特性変動の分析"},{"subitem_title":"Impact of X-ray exposure on power MOSFETs characteristics","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"信頼性","subitem_subject_scheme":"Other"}]},"item_type_id":"18","publish_date":"2021-08-25","item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_18_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"京都大学大学院情報学研究科通信情報システム専攻"},{"subitem_text_value":"京都大学大学院情報学研究科通信情報システム専攻"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/212644/files/IPSJ-DAS2021029.pdf","label":"IPSJ-DAS2021029.pdf"},"date":[{"dateType":"Available","dateValue":"2023-08-25"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-DAS2021029.pdf","filesize":[{"value":"1.7 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_date","version_id":"5dde27e9-b17c-48b8-a052-92de4639fab7","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2021 by the Information Processing Society of Japan"}]},"item_18_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"塩崎, 雅人"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"佐藤, 高史"}],"nameIdentifiers":[{}]}]},"item_18_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Masato, Shiozaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takashi, Sato","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_5794","resourcetype":"conference paper"}]},"item_18_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"プリント基板に電子部品を実装する際，はんだ内部に空乏が生じることがある．はんだの空乏は，電気抵抗の増加や熱伝導率の低下，機械的強度の低下等，様々な故障の原因となる．このためはんだ内部の空乏を検出するために X 線検査が行われる．この際，X 線により半導体素子の特性が変化する可能性がある．特にパワー MOSFET は背面に厚い金属板が取り付けられるため，X 線検査時に受ける被曝線量が大きい．そこで本稿では，Si-SJ-MOSFET と SiC-MOSFET に X 線照射を行い，X 線被曝による電流電圧特性の変動を測定した．その結果，SiC-MOSFET の特性変動量は Si-SJ-MOSFET に比べ小さく，放射線許容量が高いことが示された．","subitem_description_type":"Other"}]},"item_18_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"When electronic components are mounted on a printed circuit board, voids may occur in the solder bump. The voids could cause various failures, such as increased electrical resistance, decreased thermal conductivity, and decreased mechanical strength. For this reason, X-ray inspection is used to detect voids in the solder. During the process, the characteristics of the semiconductor device may change due to the X-rays. In particular, power MOSFETs have a thick metal plate attached to the back of the device, receiving a high radiation dose during X-ray inspection. In this paper, Si super-junction (SJ) MOSFETs and SiC-MOSFETs are irradiated with X-rays, and the variation of current-voltage characteristics due to X-rays exposure is evaluated. The experiments have shown that the characteristic change of SiC-MOSFETs is smaller than that of Si-SJ-MOSFETs, indicating a higher radiation tolerance.","subitem_description_type":"Other"}]},"item_18_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"166","bibliographic_titles":[{"bibliographic_title":"DAシンポジウム2021論文集"}],"bibliographicPageStart":"160","bibliographicIssueDates":{"bibliographicIssueDate":"2021-08-25","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"2021"}]},"relation_version_is_last":true,"weko_creator_id":"44499"},"id":212644,"updated":"2025-01-19T17:26:05.776061+00:00","links":{},"created":"2025-01-19T01:13:34.798909+00:00"}