{"metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00212618","sets":["6164:6165:7651:10646"]},"path":["10646"],"owner":"44499","recid":"212618","title":["間欠動作を行うIoT向けプロセッサに適したFiCCを用いた不揮発スタンダードセルメモリの実測評価"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-08-25"},"_buckets":{"deposit":"006c3678-143d-4403-a01e-d9938c48a2c9"},"_deposit":{"id":"212618","pid":{"type":"depid","value":"212618","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"間欠動作を行うIoT向けプロセッサに適したFiCCを用いた不揮発スタンダードセルメモリの実測評価","author_link":["542762","542759","542761","542755","542760","542757","542758","542756"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"間欠動作を行うIoT向けプロセッサに適したFiCCを用いた不揮発スタンダードセルメモリの実測評価"},{"subitem_title":"Nonvolatile Standard Cell Memory Using FiCC for IoT Processors with Intermittent Operations","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"低電力・低エネルギー設計","subitem_subject_scheme":"Other"}]},"item_type_id":"18","publish_date":"2021-08-25","item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_18_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"京都工芸繊維大学電子システム工学専攻"},{"subitem_text_value":"京都工芸繊維大学電子システム工学専攻"},{"subitem_text_value":"大阪大学"},{"subitem_text_value":"立命館大学"}]},"item_18_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Department of Electronics, Kyoto Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Department of Electronics, Kyoto Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Osaka University","subitem_text_language":"en"},{"subitem_text_value":"Ritsumeikan University","subitem_text_language":"en"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/212618/files/IPSJ-DAS2021003.pdf","label":"IPSJ-DAS2021003.pdf"},"date":[{"dateType":"Available","dateValue":"2023-08-25"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-DAS2021003.pdf","filesize":[{"value":"1.8 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_date","version_id":"61691e55-4db8-4941-b738-fd802b392583","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2021 by the Information Processing Society of Japan"}]},"item_18_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"阿部, 佑貴"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小林, 和淑"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"塩見, 準"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"越智, 裕之"}],"nameIdentifiers":[{}]}]},"item_18_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yuki, Abe","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kazutoshi, Kobayashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jun, Shiomi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hiroyuki, Ochi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_5794","resourcetype":"conference paper"}]},"item_18_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"スタンダードセルを用いて論理合成と自動配置配線により設計するメモリをスタンダードセルメモリ (SCM) と呼ぶ．本稿では，間欠動作を行う IoT 向けプロセッサに適した FiCC (Fishbone-in-Cage Capacitor) を用いた不揮発スタンダードセルメモリ (NV-SCM) の実測について述べる．180nm プロセスを用いて，NV-SCM のレイアウト設計を行った．ビットセルの不揮発化による面積オーバーヘッドは 75% となった．実測により，動作周波数 10MHz における NV-SCM の動作を確認した．データ保持時間は不揮発メモリへの書き込み時間を 0.5 秒とした場合，約 60 分となった．また，1 時間の内，5 分の動作を仮定すると，NV-SCM は SCM と比べ，消費エネルギーを 35.2% 削減できることをシミュレーションにより示す．さらに不揮発プロセッサの設計に向けて，NV-SCM 用ビットセルの修正に加え，不揮発プロセッサ用フリップフロップを提案した．","subitem_description_type":"Other"}]},"item_18_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"A standard cell memory (SCM) is a memory designed by logic synthesis and automatic placement and routing using standard cells. In this paper, we show the measurement results of a nonvolatile standard cell memory (NV-SCM) using a Fishbone-in-Cage Capacitor (FiCC), which is suitable for IoT processors with intermittent operations. The NV-SCM was fabricated in a 180nm CMOS process technology. The area overhead due to the nonvolatility of bit cells was 75%. In measurements, we confirmed the operation of the NV-SCM at an operating frequency of 10MHz. The data retention time was about 60 minutes when the writing time to the nonvolatile memory was 0.5 seconds. Assuming 5 minutes operation time per hour, the simulation results show that the NV-SCM can reduce 35.2% of energy consumption compared to the SCM. In addition, for the design of a nonvolatile processor, we modified a bit cell for NV-SCM and proposed a flip-flop for the nonvolatile processor.","subitem_description_type":"Other"}]},"item_18_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"8","bibliographic_titles":[{"bibliographic_title":"DAシンポジウム2021論文集"}],"bibliographicPageStart":"3","bibliographicIssueDates":{"bibliographicIssueDate":"2021-08-25","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"2021"}]},"relation_version_is_last":true,"weko_creator_id":"44499"},"id":212618,"updated":"2025-01-19T17:26:35.490928+00:00","links":{},"created":"2025-01-19T01:13:33.304885+00:00"}