{"metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00192649","sets":["1164:2822:9431:9614"]},"path":["9614"],"owner":"44499","recid":"192649","title":["トランジスタサイズを変えた記憶保持特性の異なるフリップフロップ群を利用したばらつき評価"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-11-28"},"_buckets":{"deposit":"f787556c-a94f-45ec-a589-c9dff34a34ae"},"_deposit":{"id":"192649","pid":{"type":"depid","value":"192649","revision_id":0},"owners":[44499],"status":"published","created_by":44499},"item_title":"トランジスタサイズを変えた記憶保持特性の異なるフリップフロップ群を利用したばらつき評価","author_link":["450142","450139","450138","450141","450140","450143"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"トランジスタサイズを変えた記憶保持特性の異なるフリップフロップ群を利用したばらつき評価"},{"subitem_title":"Flip-Flops with different retention characteristics for process variation estimation","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"回路設計技術","subitem_subject_scheme":"Other"}]},"item_type_id":"4","publish_date":"2018-11-28","item_4_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学大学院理工学研究科"},{"subitem_text_value":"埼玉大学大学院理工学研究科"},{"subitem_text_value":"埼玉大学大学院理工学研究科"}]},"item_4_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Graduate School of Science and Engineering, Saitama University","subitem_text_language":"en"},{"subitem_text_value":"Graduate School of Science and Engineering, Saitama University","subitem_text_language":"en"},{"subitem_text_value":"Graduate School of Science and Engineering, Saitama University","subitem_text_language":"en"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/192649/files/IPSJ-EMB18049035.pdf","label":"IPSJ-EMB18049035.pdf"},"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-EMB18049035.pdf","filesize":[{"value":"553.6 kB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"0","billingrole":"42"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_login","version_id":"9bae04c7-eb59-4705-8fe0-d490c5012dd7","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2018 by the Institute of Electronics, Information and Communication Engineers This SIG report is only available to those in membership of the SIG."}]},"item_4_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"深澤, 研人"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"西澤, 真一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"伊藤, 和人"}],"nameIdentifiers":[{}]}]},"item_4_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kento, Fukazawa","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Shinichi, Nishizawa","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kazuhito, Ito","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12149313","subitem_source_identifier_type":"NCID"}]},"item_4_textarea_12":{"attribute_name":"Notice","attribute_value_mlt":[{"subitem_textarea_value":"SIG Technical Reports are nonrefereed and hence may later appear in any journals, conferences, symposia, etc."}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_18gh","resourcetype":"technical report"}]},"item_4_source_id_11":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2188-868X","subitem_source_identifier_type":"ISSN"}]},"item_4_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"トランジスタの特性ばらつきをフリップフロップの記憶保持特性を用いて推定する．集積回路中に記憶素子として存在するスキャンフリップフロップをばらつきセンサとして流用することで面積コストを抑えることができる．トランジスタサイズを変更した記憶保持特性の異なるフリップフロップ群を利用することで測定時間を削減する手法を提案する．特性ばらつきに対して感度の異なるリングオシレータ回路と組み合わせて利用することで，PMOS トランジスタと NMOS トランジスタの特性ばらつきを個別に推定することができる．65nm プロセスを対象に設計実験を行った結果，しきい値電圧のばらつき量を推定する事ができ，その誤差は PMOS トランジスタで平均 1.75mV，NMOS トランジスタで平均 1.17mV であった．","subitem_description_type":"Other"}]},"item_4_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"This paper proposes to use multiple D-Flip-Flops having different retention characteristics with Ring Oscillator to monitor the PMOS and NMOS variabilities. Flip-Flops in Scan Chain are used as a process monitor circuit to estimate the amount of process variation. The retention characteristics of Flip-Flops strongly depend on the PMOS and NMOS transistors. We propose to use Flip-Flops with various transistors width to estimate the amount of process variation with one-shot measurement. Experimental result targeting 65 nm process shows that we can estimate the amount of threshold variation and the estimated errors are 1.75 mV and 1.17 mV for PMOS and NMOS transistor, respectively.","subitem_description_type":"Other"}]},"item_4_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"5","bibliographic_titles":[{"bibliographic_title":"研究報告組込みシステム（EMB）"}],"bibliographicPageStart":"1","bibliographicIssueDates":{"bibliographicIssueDate":"2018-11-28","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"35","bibliographicVolumeNumber":"2018-EMB-49"}]},"relation_version_is_last":true,"weko_creator_id":"44499"},"updated":"2025-01-20T00:03:26.033810+00:00","created":"2025-01-19T00:58:20.842485+00:00","links":{},"id":192649}