{"updated":"2025-01-20T03:43:36.991069+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00183284","sets":["6164:6165:7651:9236"]},"path":["9236"],"owner":"11","recid":"183284","title":["PMOSパストランジスタを用いた非多重化耐ソフトエラーFFの提案及び評価"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-08-23"},"_buckets":{"deposit":"22afd89f-84e6-4680-8c25-2e5aa3ace36f"},"_deposit":{"id":"183284","pid":{"type":"depid","value":"183284","revision_id":0},"owners":[11],"status":"published","created_by":11},"item_title":"PMOSパストランジスタを用いた非多重化耐ソフトエラーFFの提案及び評価","author_link":["401790","401789","401793","401795","401792","401796","401791","401794"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"PMOSパストランジスタを用いた非多重化耐ソフトエラーFFの提案及び評価"},{"subitem_title":"Non-Redundant Radiation-Hardened Flip Flops Using PMOS Pass-Transistors in a 65 nm FDSOI Process","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"信頼性・ばらつき","subitem_subject_scheme":"Other"}]},"item_type_id":"18","publish_date":"2017-08-23","item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_18_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"京都工芸繊維大学電子システム工学専攻"},{"subitem_text_value":"京都工芸繊維大学電子システム工学専攻"},{"subitem_text_value":"京都工芸繊維大学電子システム工学専攻"},{"subitem_text_value":"京都工芸繊維大学電子システム工学専攻"}]},"item_18_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Department of Electronics, Kyoto Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Department of Electronics, Kyoto Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Department of Electronics, Kyoto Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Department of Electronics, Kyoto Institute of Technology","subitem_text_language":"en"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/183284/files/IPSJ-DAS2017037.pdf","label":"IPSJ-DAS2017037.pdf"},"date":[{"dateType":"Available","dateValue":"2019-08-23"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-DAS2017037.pdf","filesize":[{"value":"1.5 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"330","billingrole":"10"},{"tax":["include_tax"],"price":"330","billingrole":"44"}],"accessrole":"open_date","version_id":"b1767fed-ec96-470a-b364-1bb7ee165881","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2017 by the Information Processing Society of Japan"}]},"item_18_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"山田, 晃大"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"丸岡, 晴喜"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"古田, 潤"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小林, 和淑"}],"nameIdentifiers":[{}]}]},"item_18_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kodai, Yamada","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Haruki, Maruoka","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jun, Furuta","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kazutoshi, Kobayashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_5794","resourcetype":"conference paper"}]},"item_18_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"集積回路素子の微細化に伴いソフトエラーによる集積回路の信頼性低下が問題となっている．本研究では，65 nm FDSOI (Fully Depleted Silicon on Insulator) プロセスにおける PMOS パストランジスタを用いた非多重化耐ソフトエラー FF (Flip-Flop) を 2 種類提案する．TCAD シミュレーションを用いて，提案FFの臨界 LET (Linear Energy Transfer) が 20 MeV-cm2/mg 以上であることを確認し，提案 FF を搭載したチップを試作した．提案 FF は既存の非多重化耐ソフトエラーFFである Stacked FF に比べて遅延時間が約 20 %，消費電力が約 50 % 削減できた．電源電圧 0.8 V において，両提案FFはどちらも Stacked FF と比べて中性子線起因のソフトエラー率を 1/7 以下に低減できることが判明した．この結果から，地上で利用する高信頼性 FF では NMOS トランジスタで起きるソフトエラー対策を施すことで高いソフトエラー耐性を得ることを明らかにした．","subitem_description_type":"Other"}]},"item_18_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"According to the Moore's law, LSIs are miniaturized and the reliability of LSIs is degraded. In this paper, we propose two radiation-hardened Flip-Flops (FFs) with small dynamic power and short delay overheads in a 65 nm Fully Depleted Silicon on Insulator (FDSOI) process using PMOS pass-transistors. We evaluated the radiation hardness of the proposed FFs by TCAD simulations and confirmed that their threshold LET values are higher than 20 MeV-cm2/mg. The Proposed FFs have about 20% shorter delay and about 50% smaller dynamic power overheads than the conventional Stacked FF. We measured their soft-error reliance by neutron irradiation. Experimental results show that Soft Error Rates (SERs) of the proposed FFs are less than 1/7 smaller than the Stacked FF at VDD=0.8 V. In addition, it is clear that semiconductor chips in the terrestrial region can obtain high reliability using only radiation-hardened techniques to suppress soft errors from NMOS transistors.","subitem_description_type":"Other"}]},"item_18_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"197","bibliographic_titles":[{"bibliographic_title":"DAシンポジウム2017論文集"}],"bibliographicPageStart":"192","bibliographicIssueDates":{"bibliographicIssueDate":"2017-08-23","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"2017"}]},"relation_version_is_last":true,"weko_creator_id":"11"},"created":"2025-01-19T00:50:49.343409+00:00","id":183284,"links":{}}