{"created":"2025-01-19T00:44:44.346026+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00174549","sets":["6164:6165:7651:8901"]},"path":["8901"],"owner":"11","recid":"174549","title":["回路トポロジー可変なリングオシレータを用いたプロセス変動量と動作温度の推定手法"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-09-07"},"_buckets":{"deposit":"4883aba6-8dc8-4f00-8096-7472db6da833"},"_deposit":{"id":"174549","pid":{"type":"depid","value":"174549","revision_id":0},"owners":[11],"status":"published","created_by":11},"item_title":"回路トポロジー可変なリングオシレータを用いたプロセス変動量と動作温度の推定手法","author_link":["359767","359770","359766","359771","359768","359769"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"回路トポロジー可変なリングオシレータを用いたプロセス変動量と動作温度の推定手法"},{"subitem_title":"A Method of Estimating Process Variation and Chip Temperature Using a Reconfigurable Ring Oscillator","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"信頼性・ばらつき","subitem_subject_scheme":"Other"}]},"item_type_id":"18","publish_date":"2016-09-07","item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_18_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"京都大学大学院情報学研究科"},{"subitem_text_value":"京都大学大学院情報学研究科"},{"subitem_text_value":"京都大学大学院情報学研究科"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/174549/files/IPSJ-DAS2016033.pdf","label":"IPSJ-DAS2016033.pdf"},"date":[{"dateType":"Available","dateValue":"2018-09-07"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-DAS2016033.pdf","filesize":[{"value":"1.1 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"330","billingrole":"10"},{"tax":["include_tax"],"price":"330","billingrole":"44"}],"accessrole":"open_date","version_id":"585d868d-d61f-4649-95d4-56c3f159ce0b","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2016 by the Information Processing Society of Japan"}]},"item_18_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"岸本, 真"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"石原, 亨"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小野寺, 秀俊"}],"nameIdentifiers":[{}]}]},"item_18_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Tadashi, Kishimoto","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tohru, Ishihara","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hidetoshi, Onodera","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_5794","resourcetype":"conference paper"}]},"item_18_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"本稿では，回路トポロジーを変更可能なリングオシレータを用い，対象回路の動作温度とトランジスタのしきい値電圧変動量を推定する手法を提案する．回路トポロジー可変なリングオシレータはその構成により nMOSFET のしきい値電圧，pMOSFET のしきい値電圧，動作温度に対する発振周波数の感度が異なる．リングオシレータの回路トポロジーごとの発振周波数を計測し，分析することで回路の動作温度とトランジスタのしきい値電圧を推定可能である．商用の CMOS 65nm プロセステクノロジを用いた計算機実験により，提案手法により回路の動作温度とトランジスタのしきい値電圧が分離可能であることを確認した．","subitem_description_type":"Other"}]},"item_18_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"This paper proposes a method for estimating process variation and die temperature using topology-reconfigurable ring oscillator. The frequency of the topology-reconfigurable ring oscillator in each configuration has different sensitivities to the die temperature, the threshold voltage in nMOS and pMOS transistor. Therefore, by analyzing frequencies of the ring oscillator with different configuration, we can estimate the threshold voltage and die temperature. With circuit simulation targeting a commercial 65 nm CMOS process, we confirm that our method accurately estimates the die temperature and the threshold voltage.","subitem_description_type":"Other"}]},"item_18_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"180","bibliographic_titles":[{"bibliographic_title":"DAシンポジウム2016論文集"}],"bibliographicPageStart":"175","bibliographicIssueDates":{"bibliographicIssueDate":"2016-09-07","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"33","bibliographicVolumeNumber":"2016"}]},"relation_version_is_last":true,"weko_creator_id":"11"},"id":174549,"updated":"2025-01-20T06:39:37.125092+00:00","links":{}}