{"created":"2025-01-19T00:44:44.238002+00:00","updated":"2025-01-20T06:39:34.977319+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00174547","sets":["6164:6165:7651:8901"]},"path":["8901"],"owner":"11","recid":"174547","title":["リードソロモン符号に基づいたマルチレベルセル不揮発性メモリ書き込み削減"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-09-07"},"_buckets":{"deposit":"938559ca-de12-4c96-8351-c720e3cf85ee"},"_deposit":{"id":"174547","pid":{"type":"depid","value":"174547","revision_id":0},"owners":[11],"status":"published","created_by":11},"item_title":"リードソロモン符号に基づいたマルチレベルセル不揮発性メモリ書き込み削減","author_link":["359757","359759","359758"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"リードソロモン符号に基づいたマルチレベルセル不揮発性メモリ書き込み削減"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"システムレベル設計","subitem_subject_scheme":"Other"}]},"item_type_id":"18","publish_date":"2016-09-07","item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_18_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"早稲田大学"},{"subitem_text_value":"早稲田大学"},{"subitem_text_value":"早稲田大学"}]},"item_18_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"Waseda University","subitem_text_language":"en"},{"subitem_text_value":"Waseda University","subitem_text_language":"en"},{"subitem_text_value":"Waseda University","subitem_text_language":"en"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/174547/files/IPSJ-DAS2016031.pdf","label":"IPSJ-DAS2016031.pdf"},"date":[{"dateType":"Available","dateValue":"2018-09-07"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-DAS2016031.pdf","filesize":[{"value":"1.1 MB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"660","billingrole":"5"},{"tax":["include_tax"],"price":"330","billingrole":"6"},{"tax":["include_tax"],"price":"330","billingrole":"10"},{"tax":["include_tax"],"price":"330","billingrole":"44"}],"accessrole":"open_date","version_id":"f1dfacf8-bc9f-4d7b-ad2c-61464c4a05b5","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2016 by the Information Processing Society of Japan"}]},"item_18_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"多和田, 雅師"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"柳澤, 政生"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"戸川, 望"}],"nameIdentifiers":[{}]}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_5794","resourcetype":"conference paper"}]},"item_18_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"近年 IoT デバイスの普及に伴いノーマリーオフ可能な不揮発性メモリの需要が高まっている．特に 1 個のメモリセルに複数の状態を割り当てるマルチレベルセル不揮発性メモリが主流である．マルチレベルセル不揮発性メモリは書き込み耐久性が低いという問題がある．この問題を解決するため誤り訂正符号に基づくメモリ冗長化を考える．情報をメモリセルをに書き込むとき，冗長化されているため書き込み方のパターンが多くなる．書き込み内容に加えて書き込み位置を情報とみなせるため，少ない書き換えメモリセルでも多くの情報を保存できる．リードソロモン符号に基づきメモリセルの状態を書き換え，書き換えるメモリセルの個数を削減し書き込み耐久性を向上させる．","subitem_description_type":"Other"}]},"item_18_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"168","bibliographic_titles":[{"bibliographic_title":"DAシンポジウム2016論文集"}],"bibliographicPageStart":"163","bibliographicIssueDates":{"bibliographicIssueDate":"2016-09-07","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"31","bibliographicVolumeNumber":"2016"}]},"relation_version_is_last":true,"weko_creator_id":"11"},"id":174547,"links":{}}