{"updated":"2025-01-21T11:12:13.017520+00:00","metadata":{"_oai":{"id":"oai:ipsj.ixsq.nii.ac.jp:00101419","sets":["1164:2036:7423:7593"]},"path":["7593"],"owner":"11","recid":"101419","title":["半正定値緩和法を用いた LELECUT トリプルパターニングのためのレイアウト分割手法"],"pubdate":{"attribute_name":"公開日","attribute_value":"2014-05-22"},"_buckets":{"deposit":"d2804279-fbfa-4ac1-84a9-c023c6bb5ca4"},"_deposit":{"id":"101419","pid":{"type":"depid","value":"101419","revision_id":0},"owners":[11],"status":"published","created_by":11},"item_title":"半正定値緩和法を用いた LELECUT トリプルパターニングのためのレイアウト分割手法","author_link":["0","0"],"item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"半正定値緩和法を用いた LELECUT トリプルパターニングのためのレイアウト分割手法"},{"subitem_title":"LELECUT Triple Patterning Lithography Layout Decomposition using Positive Semidefinite Relaxation","subitem_title_language":"en"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"物理設計","subitem_subject_scheme":"Other"}]},"item_type_id":"4","publish_date":"2014-05-22","item_4_text_3":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"会津大学"},{"subitem_text_value":"東京工業大学"},{"subitem_text_value":"株式会社東芝"},{"subitem_text_value":"株式会社東芝"},{"subitem_text_value":"東京工業大学"},{"subitem_text_value":"株式会社東芝"},{"subitem_text_value":"株式会社東芝"}]},"item_4_text_4":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_value":"The University of Aizu","subitem_text_language":"en"},{"subitem_text_value":"Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Toshiba Corporation","subitem_text_language":"en"},{"subitem_text_value":"Toshiba Corporation","subitem_text_language":"en"},{"subitem_text_value":"Tokyo Institute of Technology","subitem_text_language":"en"},{"subitem_text_value":"Toshiba Corporation","subitem_text_language":"en"},{"subitem_text_value":"Toshiba Corporation","subitem_text_language":"en"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_publisher":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"情報処理学会","subitem_publisher_language":"ja"}]},"publish_status":"0","weko_shared_id":-1,"item_file_price":{"attribute_name":"Billing file","attribute_type":"file","attribute_value_mlt":[{"url":{"url":"https://ipsj.ixsq.nii.ac.jp/record/101419/files/IPSJ-SLDM14166006.pdf"},"date":[{"dateType":"Available","dateValue":"2100-01-01"}],"format":"application/pdf","billing":["billing_file"],"filename":"IPSJ-SLDM14166006.pdf","filesize":[{"value":"358.9 kB"}],"mimetype":"application/pdf","priceinfo":[{"tax":["include_tax"],"price":"0","billingrole":"10"},{"tax":["include_tax"],"price":"0","billingrole":"44"}],"accessrole":"open_date","version_id":"ad7eadb0-d2dc-4330-af72-514d2474b9b6","displaytype":"detail","licensetype":"license_note","license_note":"Copyright (c) 2014 by the Institute of Electronics, Information and Communication Engineers This SIG report is only available to those in membership of the SIG."}]},"item_4_creator_5":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"小平, 行秀"},{"creatorName":"松井, 知己"},{"creatorName":"横山, 陽子"},{"creatorName":"児玉, 親亮"},{"creatorName":"高橋, 篤司"},{"creatorName":"野嶋, 茂樹"},{"creatorName":"田中, 聡"}],"nameIdentifiers":[{}]}]},"item_4_creator_6":{"attribute_name":"著者名(英)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yukihide, Kohira","creatorNameLang":"en"},{"creatorName":"Tomomi, Matsui","creatorNameLang":"en"},{"creatorName":"Yoko, Yokoyama","creatorNameLang":"en"},{"creatorName":"Chikaaki, Kodama","creatorNameLang":"en"},{"creatorName":"Atsushi, Takahashi","creatorNameLang":"en"},{"creatorName":"Shigeki, Nojima","creatorNameLang":"en"},{"creatorName":"Satoshi, Tanaka","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_4_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11451459","subitem_source_identifier_type":"NCID"}]},"item_4_textarea_12":{"attribute_name":"Notice","attribute_value_mlt":[{"subitem_textarea_value":"SIG Technical Reports are nonrefereed and hence may later appear in any journals, conferences, symposia, etc."}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourceuri":"http://purl.org/coar/resource_type/c_18gh","resourcetype":"technical report"}]},"item_4_description_7":{"attribute_name":"論文抄録","attribute_value_mlt":[{"subitem_description":"次世代リソグラフイ技術として，2 つのマスクをパタン形成のために，3 つ目のマスクを形成したパタンを削除するためのカットとして使用する LELECUT タイプのトリプルパターニングが議論されている．本稿では，与えられたレイアウトのパタンを形成するために，半正定植緩和法とランダマイズド算法を用いて LELECUT トリプルパターニングの 3 つのマスクのパタン形状を求める手法を提案する．","subitem_description_type":"Other"}]},"item_4_description_8":{"attribute_name":"論文抄録(英)","attribute_value_mlt":[{"subitem_description":"One of the most promising techniques in the 14 nm logic node and beyond is triple patterning lithography (TPL). Recently, LELECUT type TPL technology, where the third mask is used to cut the patterns, is discussed to alleviate native conflict and overlay problems in LELELE type TPL. In this paper, we formulate LELECUT decomposition problem which maximizes the compliance to the lithography and apply positive semidefinite relaxations. In our proposed methods, LELECUT decomposition is obtained from an optimum solution of the positive semidefinite relaxations by randomized rounding technique.","subitem_description_type":"Other"}]},"item_4_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicPageEnd":"6","bibliographic_titles":[{"bibliographic_title":"研究報告システムとLSIの設計技術（SLDM）"}],"bibliographicPageStart":"1","bibliographicIssueDates":{"bibliographicIssueDate":"2014-05-22","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicVolumeNumber":"2014-SLDM-166"}]},"relation_version_is_last":true,"weko_creator_id":"11"},"created":"2025-01-18T23:47:01.510652+00:00","id":101419,"links":{}}