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        <identifier>oai:ipsj.ixsq.nii.ac.jp:00222444</identifier>
        <datestamp>2025-01-19T13:44:55Z</datestamp>
        <setSpec>1164:2036:10820:11033</setSpec>
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          <dc:title>帯域内位相雑音の低減に向けた3次MASH型∆ΣFDCに基づくデジタル位相同期回路の設計</dc:title>
          <dc:title>Design of Digital Phase-Locked Loop Circuit based on 3rd-Order MASH ∆Σ FDC for Low In-Band Phase Noise</dc:title>
          <dc:creator>岩下, 僚我</dc:creator>
          <dc:creator>徐, 祖楽</dc:creator>
          <dc:creator>長田, 将</dc:creator>
          <dc:creator>柴田, 凌弥</dc:creator>
          <dc:creator>熊野, 陽</dc:creator>
          <dc:creator>飯塚, 哲也</dc:creator>
          <dc:creator>Ryoga, Iwashita</dc:creator>
          <dc:creator>Zule, Xu</dc:creator>
          <dc:creator>Masaru, Osada</dc:creator>
          <dc:creator>Ryoya, Shibata</dc:creator>
          <dc:creator>Yo, Kumano</dc:creator>
          <dc:creator>Tetsuya, Iizuka</dc:creator>
          <dc:subject>ハードウェアデザイン</dc:subject>
          <dc:description>∆Σ FDC-PLL は ∆Σ 変調により低域の量子化雑音低減が可能な PLL であるが，帯域幅を狭くする必要がある．本論文では MASH を用いたより高い次数の ∆Σ FDC-PLL の設計方法を提案している．提案手法により従来よりも帯域内の量子化雑音が低減され，ループの最適化をより柔軟に行うことができる．設計には 65nm LP CMOS プロセスを用い，従来の構成に 3bit SAR ADC と ∆Σ ADC を加え実装した．</dc:description>
          <dc:description>∆Σ frequency-to-digital converter based phase locked loops (FDC-PLLs) can reduce its quantization noise at low frequency by ∆Σ modulation. However, it requires narrow PLL bandwidth. This paper proposes the method to design higher-order ∆Σ FDC-PLLs by applying multi-stage noise shaping (MASH). The proposed PLLs can make in-band quantization noise lower than that of conventional FDC-PLLs , which enables more ﬂexible loop optimization. The proposed PLL is designed in 65 nm CMOS process using 3bit SAR ADC and a ∆Σ ADC.</dc:description>
          <dc:description>technical report</dc:description>
          <dc:publisher>情報処理学会</dc:publisher>
          <dc:date>2022-11-21</dc:date>
          <dc:format>application/pdf</dc:format>
          <dc:identifier>研究報告システムとLSIの設計技術（SLDM）</dc:identifier>
          <dc:identifier>25</dc:identifier>
          <dc:identifier>2022-SLDM-200</dc:identifier>
          <dc:identifier>1</dc:identifier>
          <dc:identifier>6</dc:identifier>
          <dc:identifier>2188-8639</dc:identifier>
          <dc:identifier>AA11451459</dc:identifier>
          <dc:identifier>https://ipsj.ixsq.nii.ac.jp/record/222444/files/IPSJ-SLDM22200025.pdf</dc:identifier>
          <dc:language>jpn</dc:language>
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